Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device for reducing interference between adjoining gates and method for manufacturing the same

Semiconductor device for reducing interference between adjoining gates and method for manufacturing the same

US Patent 8124481 · Granted Feb 28, 2012

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transistor having dual work function buried gate electrode and method for fabric2017
Dual work function buried gate type transistor and method for fabricating the sa2017
Semiconductor device having dual work function gate structure, method for fabric2017
Method for fabricating semiconductor device having dual work function gate struc2017
Transistor having dual work function buried gate electrode and method for fabric2016
Semiconductor device having dual work function gate structure, method for fabric2016
Dual work function buried gate type transistor and method for fabricating the sa2016
Semiconductor device having buried gate, method of fabricating the same, and mod2016
Semiconductor device having dual work function gate structure and electronic dev2016
Dual work function buried gate type transistor and method for fabricating the sa2016
Semiconductor device having buried gate, method of fabricating the same, and mod2015
Semiconductor device for reducing interference between adjoining gates and metho2010