Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor having dual work function buried gate electrode and method for fabricating the same

Transistor having dual work function buried gate electrode and method for fabricating the same

US Patent 9530849 · Granted Dec 27, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and apparatus for providing driver interface2025
Flexible organic electroluminescent device and method for fabricating the same2023
Flexible organic electroluminescent device and method for fabricating the same2021
Flexible organic electroluminescent device and method for fabricating the same2020
Isolation structure and method for manufacturing the same2019
Isolation structure and method for manufacturing the same2019
Method of manufacturing isolation structure for semiconductor device2019
Method of manufacturing isolation structure for semiconductor device2019
Flexible organic electroluminescent device and method for fabricating the same2018
Method for manufacturing isolation structure2018
Method for manufacturing isolation structure2018
Transistor having dual work function buried gate electrode and method for fabric2017