Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate

Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate

US Patent 8120114 · Granted Feb 21, 2012

Estimated economic value: $21,312,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for validating critical paths of integrated circuits2025
Integrated circuit interconnect structures with graphene cap2025
Conformal low temperature hermetic dielectric diffusion barriers2025
Method and apparatus to inject errors in a memory block and validate diagnostic 2024
Surface wave launcher for high-speed data links over high-voltage power lines wi2024
Conformal low temperature hermetic dielectric diffusion barriers2024
Augmented intelligence based virtual meeting user experience improvement2023
Conformal low temperature hermetic dielectric diffusion barriers2023
Process for xylitol production from xylose2023
Conformal low temperature hermetic dielectric diffusion barriers2023
System and method for reducing mutual coupling for noise reduction in semiconduc2022
Integrated input/output pad and analog multiplexer architecture2022