Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Single crystal silicon wafer for insulated gate bipolar transistors and process for producing the same

Single crystal silicon wafer for insulated gate bipolar transistors and process for producing the same

US Patent 8105436 · Granted Jan 31, 2012

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of predicting thermal donor formation behavior in silicon wafer, method o2021
Silicon wafer2021
Silicon wafer and method for manufacturing the same2019
Epitaxial silicon wafer and method for manufacturing same2016
Method of manufacturing silicon single crystal, silicon single crystal ingot, an2014
Silicon single crystal wafer for IGBT and method for manufacturing silicon singl2013
Silicon wafer and method for producing the same2013
Silicon wafer and method for producing the same2012
Silicon wafer for IGBT and method for producing same2010
Single crystal silicon wafer for insulated gate bipolar transistors2009
Manufacturing method of silicon wafer2009
Silicon wafer for IGBT and method for producing same2008