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Home › Semiconductor device with fluorine-containing interlayer dielectric film to prevent chalcogenide material layer from exfoliating from the interlayer dielectric film and process for producing the same

Semiconductor device with fluorine-containing interlayer dielectric film to prevent chalcogenide material layer from exfoliating from the interlayer dielectric film and process for producing the same

US Patent 8044489 · Granted Oct 25, 2011

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