Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Manufacturing method of a NOR flash memory with phosphorous and arsenic ion implantations

Manufacturing method of a NOR flash memory with phosphorous and arsenic ion implantations

US Patent 8017488 · Granted Sep 13, 2011

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Compact light splitting devices and methods2025
Polarization beam splitter using asymmetric power splitting and multipath interf2025
Non-volatile memory having discrete isolation structure and SONOS memory cell, m2019
Structure for a multiple-gate FET device and a method for its fabrication2016
Single-port read multiple-port write storage device using single-port memory cel2014
Structure for a multiple-gate FET device and a method for its fabrication2014
Structure for a multiple-gate FET device and a method for its fabrication2014
System and method for improving reliability in a semiconductor device2014
System and method for reducing cross-coupling noise between charge storage eleme2014
Synchronous two-port read, two-port write memory emulator2014
Method for forming a semiconductor layer with improved gap filling properties2014
System and method for improving mesa width in a semiconductor device2013