Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Creation of dielectrically insulating soi-technlogical trenches comprising rounded edges for allowing higher voltages

Creation of dielectrically insulating soi-technlogical trenches comprising rounded edges for allowing higher voltages

US Patent 7989308 · Granted Aug 2, 2011

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Trench capacitors2025
Trench insulation structure with enlarged electrically conductive side wall2024
Geometrically shaped components in an assembly for a transfer print and associat2023
Semiconductor device along with multi-functional units and method for manufactur2023
Method of manufacturing semiconductor devices to increase yield in micro-transfe2022
Trench insulation structure with enlarged electrically conductive side wall2022
Method for a transfer print between substrates2021
Semiconductor substrate and method for producing a semiconductor substrate2021
Geometrically shaped components in an assembly for a transfer print and associat2020
Integrated circuit having a component provided by transfer print and method for 2019
DMOS transistor having an increased breakdown voltage and method for production2015
High-voltage power transistor using SOI technology2014