Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of erasing an NVM cell that utilizes a gated diode

Method of erasing an NVM cell that utilizes a gated diode

US Patent 7969790 · Granted Jun 28, 2011

Estimated economic value: $17,780,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Optical sensing module2025
Wearable device2025
Optical sensing module2023
Component adjustment in a signal path of an integrated sensor2023
Concave cavity for integrated microfabricated sensor2022
Integrated microfabricated alkali vapor cell sensor with reduced heading error2021
Integrated microfabricated vapor cell sensor with transparent body having two in2020
Concave cavity for integrated microfabricated sensor2020
Micro-fabricated atomic clock structure and method of forming the atomic clock s2020
Micro-fabricated atomic clock structure and method of forming the atomic clock s2020
Microfabricated atomic clocks and magnetometers utilizing side recesses2020
Temperature gradient in microfabricated sensor cavity2019