Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of programming and erasing resistive memory devices

Methods of programming and erasing resistive memory devices

US Patent 7894243 · Granted Feb 22, 2011

Estimated economic value: $1,504,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Frequency mixing circuit with multi-transistor architecture2025
Resistive attenuator and method for improving linearity of resistive attenuator2025
Gate fringing effect based channel formation for semiconductor device2024
Nanotextured metal powders for 3D printing of metals2024
Communication chip2023
Backlight module and illuminated keyboard2022
Gate fringing effect based channel formation for semiconductor device2022
Mixing circuit2021
PUF latch for OTP memory arrays and method of operation2020
MTP-Thyristor memory cell circuits and methods of operation2019
Gate fringing effect based channel formation for semiconductor device2019
Protection circuit for integrated circuit die-let after scribe cut2019