Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor magnetic memory integrating a magnetic tunneling junction above a floating-gate memory cell

Semiconductor magnetic memory integrating a magnetic tunneling junction above a floating-gate memory cell

US Patent 7852668 · Granted Dec 14, 2010

Estimated economic value: $3,930,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Chemical vapor deposition of perovskite thin films2021
Item and luggage loss prevention system2018
Nanodevice arrays for electrical energy storage, capture and management and meth2018
Item and luggage loss prevention system2018
Apparatus including a capacitor-less memory cell and related methods2016
Transistor structures and integrated circuitry comprising an array of transistor2015
Nanodevice arrays for electrical energy storage, capture and management and meth2014
Multi-dimensional solid state lighting device array system and associated method2014
Capacitor-less memory cell, device, system and method of making same2014
Localized biasing for silicon on insulator structures2014
Capacitor-less memory cell, device, system and method of making same2013
Methods of forming lines of capacitorless one transistor DRAM cells, methods of 2013