Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements

Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements

US Patent 7834392 · Granted Nov 16, 2010

Estimated economic value: $17,626,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

User interface content state synchronization across devices2025
Silicon oxide nitride tunnel dielectric for a storage transistor in a 3-dimensio2025
Cool electron erasing in thin-film storage transistors2024
Three-dimensional memory string array of thin-film ferroelectric transistors2024
3-dimensional memory string array of thin-film ferroelectric transistors2023
User interface content state synchronization across devices2023
Cool electron erasing in thin-film storage transistors2022
Application programming interface for providing native and non-native display ut2022
User interface content state synchronization across devices2021
Device structure for a 3-dimensional NOR memory array and methods for improved e2021
Reverse memory cell2021
User interface content state synchronization across devices2020