{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Memory structure with a programmable resistive element and its manufacturing process", "item": "https://www.patentleaderboard.com/patent/7829877"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Memory structure with a programmable resistive element and its manufacturing process

Memory structure with a programmable resistive element and its manufacturing process

US Patent 7829877 · Granted Nov 9, 2010

Estimated economic value: $3,388,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

IC structure for connected capacitances and method of forming same2025
IC product with a novel bit cell design and a memory array comprising such bit c2021
Alignment key design rule check for correct placement of abutting cells in an in2019
Storage structure with non-volatile storage capability and a method of operating2018
Device comprising a plurality of FDSOI static random-access memory bitcells and 2016
Housing, in particular for a biofuel cell2015
MOS transistor with a settable threshold2013
MOS transistor with a settable threshold2013
Assembly of two parts of an integrated electronic circuit2012
Memory cell comprising one MOS transistor with an isolated body having an improv2010
Memory cell comprising one MOS transistor with an isolated body having a reinfor2009
Integrated circuit, its fabrication process and memory cell incorporating such a2007