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Home › Method for forming a buried digit line with self aligning spacing layer and contact plugs during the formation of a semiconductor device, semiconductor devices, and systems including same

Method for forming a buried digit line with self aligning spacing layer and contact plugs during the formation of a semiconductor device, semiconductor devices, and systems including same

US Patent 7821052 · Granted Oct 26, 2010

Estimated economic value: $3,167,000 ⓘ

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