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Home › Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakage

Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakage

US Patent 7785971 · Granted Aug 31, 2010

Estimated economic value: $3,097,000 ⓘ

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