Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Bipolar transistor with raised base connection region and process for the production thereof

Bipolar transistor with raised base connection region and process for the production thereof

US Patent 7777255 · Granted Aug 17, 2010

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for fabricating a bipolar transistor having self-aligned emitter contact2016
Bipolar transistor having self-adjusted emitter contact2015
Selective growth of polycrystalline silicon-containing semiconductor material on2013
Complementary bipolar semiconductor device2011
Vertical bipolar transistor2011
Vertical bipolar transistor2011
Bipolar complementary semiconductor device2010
Layers in substrate wafers2009
Semiconductor device and method for production thereof2008
Semiconductor device and method for production thereof2008
BiCMOS structure, method for producing the same and bipolar transistor for a BiC2007
DMOS transistor2007