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Home › Trench MOSFET with an ONO insulating layer sandwiched between an ESD protection module atop and a semiconductor substrate

Trench MOSFET with an ONO insulating layer sandwiched between an ESD protection module atop and a semiconductor substrate

US Patent 7728385 · Granted Jun 1, 2010

Estimated economic value: $1,713,000 ⓘ

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