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Home › Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics

Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics

US Patent 7701005 · Granted Apr 20, 2010

Estimated economic value: $4,766,000 ⓘ

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