Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Structure and fabrication of field-effect transistor for alleviating short-channel effects

Structure and fabrication of field-effect transistor for alleviating short-channel effects

US Patent 7700980 · Granted Apr 20, 2010

Estimated economic value: $4,766,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for bi-directional trench power switches2024
Semiconductor device with bi-directional double-base trench power switches2024
Gait activity learning assistance system and the application method thereof2023
Hydrogen production system2019
Structures to avoid floating resurf layer in high voltage lateral devices2019
Structures to avoid floating RESURF layer in high voltage lateral devices2018
Direct conversion transmitter and communication system utilizing the same2014
Configuration and fabrication of semiconductor structure using empty and filled 2014
Configuration and fabrication of semiconductor structure using empty and filled 2014
Structure and fabrication of field-effect transistor having nitrided gate dielec2014
Structure and fabrication of asymmetric field-effect transistor having asymmetri2014
Semiconductor architecture having field-effect transistors especially suitable f2013