Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and device for adjusting a beam property in a gas cluster ion beam system

Method and device for adjusting a beam property in a gas cluster ion beam system

US Patent 7696495 · Granted Apr 13, 2010

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Stretchable encapsulation material with high dynamic water resistivity and tissu2025
Epoxy resin composition for underwater grouting2025
Immunomodulatory polynucleotides and uses thereof2022
Weld kit and method for limited access weld joints2019
Method for high throughput using beam scan size and beam position in gas cluster2019
Pharmaceutical compositions comprising CpG oligonucleotides2018
Method and apparatus for beam deflection in a gas cluster ion beam system2017
Gas cluster ion beam etching process for etching Si-containing, Ge-containing, a2016
Method and system for growing a thin film using a gas cluster ion beam2015
Gas cluster ion beam etching process for metal-containing materials2013
Gas cluster ion beam etching process for achieving target etch process metrics f2013
Gas cluster ion beam etching process for Si-containing and Ge-containing materia2013