Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method to form ultra high quality silicon-containing compound layers

Method to form ultra high quality silicon-containing compound layers

US Patent 7651953 · Granted Jan 26, 2010

Estimated economic value: $4,757,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device including a superlattice and enriched silicon 28 epitaxial 2025
Method for making semiconductor device including a superlattice and enriched sil2025
Method for making a radio frequency silicon-on-insulator (RFSOI) wafer including2025
Method for making semiconductor device with selective etching of superlattice to2025
Semiconductor device including superlattice with O18 enriched monolayers2025
Method for making a semiconductor superlattices with different non-semiconductor2025
Method for making gate-all-around (GAA) device including a superlattice2024
Method for making semiconductor device including superlattice with oxygen and ca2024
Method for making semiconductor device including a superlattice and enriched sil2024
Gate-all-around (GAA) device including a superlattice2024
Semiconductor device including a superlattice and enriched silicon 28 epitaxial 2024
Silica scale inhibitors2024