Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

US Patent 7615802 · Granted Nov 10, 2009

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Silicon carbide device with a stripe-shaped trench gate structure2025
Semiconductor device including current spread region2024
SiC devices with shielding structure2024
Method of producing a silicon carbide device with a trench gate2024
Power transistor with integrated Schottky diode2023
Silicon carbide device with trench gate structure and method of manufacturing2023
Silicon carbide field-effect transistor including shielding areas2023
Semiconductor device including current spread region2023
Silicon carbide device with trench gate2023
SiC device with channel regions extending along at least one of the (1-100) plan2022
Silicon carbide semiconductor component2022
Silicon carbide device with Schottky contact2022