Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method including having a thin delta profile layer of germanium close to the bottom of the strained layer

Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method including having a thin delta profile layer of germanium close to the bottom of the strained layer

US Patent 7554138 · Granted Jun 30, 2009

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Spacer formation in the fabrication of planar bipolar transistors2014
Sealing structure and method of manufacturing the same2013
Semiconductor device and method of manufacture thereof2013
Method of manufacturing heterojunction bipolar transistor and heterojunction bip2013
MEMS devices2013
Semiconductor device and method of manufacture thereof2013
Method of manufacturing a bipolar transistor semiconductor device and semiconduc2013
Semiconductor device and method of manufacturing such a device2013
Method of manufacturing heterojunction bipolar transistor and heterojunction bip2012
Method of manufacturing a semiconductor device and semiconductor device obtained2012
Semiconductor device with low buried resistance and method of manufacturing such2011
Semiconductor device with a bipolar transistor and method of manufacturing such 2011