CR

Claire Ravit

NB Nxp B.V.: 2 patents #1,098 of 3,591Top 35%
Overall (All Time): #2,136,551 of 4,157,543Top 55%
2
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
7554138 Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method including having a thin delta profile layer of germanium close to the bottom of the strained layer Philippe Meunier-Beillard 2009-06-30
7157349 Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material Jurriaan Schmitz, Rita Rooyackers 2007-01-02