Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Large-diameter SiC wafer and manufacturing method thereof

Large-diameter SiC wafer and manufacturing method thereof

US Patent 7544249 · Granted Jun 9, 2009

Estimated economic value: $1,576,000 ⓘ

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Atomic layer deposition apparatus2015
Atomic layer deposition apparatus and thin film forming method2015
Method and apparatus for growing plasma atomic layer2013
Atomic layer growing apparatus2012
Voltage division resistor for acceleration tubes, acceleration tube, and acceler2010
Production method of SiC monitor wafer2006
Production method of α-SiC wafer2006
Production method of α-SiC wafer2006
Method of making SiC single crystal and apparatus for making SiC single crystal2002
Method and apparatus for producing silicon carbide single crystal2002
Method of making SiC single crystal and apparatus for making SiC single crystal2001
Method of making GaN single crystal and apparatus for making GaN single crystal2000