Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating silicide layers for semiconductor device

Method for fabricating silicide layers for semiconductor device

US Patent 7446008 · Granted Nov 4, 2008

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for fabricating a metal interconnection using a dual damascene process an2011
Method for manufacturing shallow trench isolation layer of semiconductor device2011
Method for fabricating a metal interconnection using a dual damascene process an2009
Semiconductor device and method of manufacturing the same2009
Capacitor and method for fabricating the same2007
Methods for fabricating a copper interconnect2007
Method for forming dual damascene pattern2007
Methods of fabricating semiconductor devices2006
Method of fabricating interconnection structure of semiconductor device2006
Method of forming damascene pattern in a semiconductor device2006
Dynamic random access memory capacitor and method for fabricating the same1998
Method of fabricating a dynamic random access memory stacked capacitor1996