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Home › Method of creating defect free high Ge content (> 25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques

Method of creating defect free high Ge content (> 25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques

US Patent 7445977 · Granted Nov 4, 2008

Estimated economic value: $6,466,000 ⓘ

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