Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Apparatus having a memory device with floating gate layer grain boundaries with oxidized portions

Apparatus having a memory device with floating gate layer grain boundaries with oxidized portions

US Patent 7432546 · Granted Oct 7, 2008

Estimated economic value: $1,422,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Active area salicidation for NMOS and PMOS devices2025
Semiconductor memory device structure2023
Semiconductor memory device structure2022
Thickened sidewall dielectric for memory cell2022
Semiconductor memory device structure2020
Dual-layer dielectric in memory device2020
Thickened sidewall dielectric for memory cell2020
Dual-layer dielectric in memory device2018
Semiconductor memory device structure2018
Dual-layer dielectric in memory device2017
Memory device structure2017
Method and system for signal equalization in communication between computing dev2016