Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method to remove an oxide seam along gate stack edge, when nitride space formation begins with an oxide liner surrounding gate stack

Method to remove an oxide seam along gate stack edge, when nitride space formation begins with an oxide liner surrounding gate stack

US Patent 7420240 · Granted Sep 2, 2008

Estimated economic value: $1,912,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods of filling isolation trenches for semiconductor devices and resulting st2012
Semiconductor contact device2011
Use of selective oxidation to form asymmetrical oxide features during the manufa2008
Vertical floating gate transistor2007
Semiconductor contact device and method2007
Modified source/drain re-oxidation method and system2007
Minimizing adjacent wordline disturb in a memory device2007
Minimizing adjacent wordline disturb in a memory device2007
Minimizing adjacent wordline disturb in a memory device2007
Semiconductor contact device2006
Gate coupling in floating-gate memory cells2006
Programmable memory devices supported by semiconductor substrates2006