Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Yield improvement in silicon-germanium epitaxial growth

Yield improvement in silicon-germanium epitaxial growth

US Patent 7413967 · Granted Aug 19, 2008

Estimated economic value: $14,278,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Cart with a foldable platform2025
Fluid sampling unit2021
Distributed correlation and analysis of patient therapy data2021
Techniques for job flow processing2019
Techniques to provide real-time processing enhancements and modeling for data an2017
Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)2014
Bipolar transistor structure and method including emitter-base interface impurit2013
Silicon germanium heterojunction bipolar transistor having interstitial trapping2012
Stress-modified device structures, methods of fabricating such stress-modified d2010
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance 2010
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance 2007
Yield improvement in silicon-germanium epitaxial growth2006