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Home › Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor

Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor

US Patent 7361536 · Granted Apr 22, 2008

Estimated economic value: $128,504,000 ⓘ

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