Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation

Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation

US Patent 11127596 · Granted Sep 21, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Epitaxial growth of aluminum on aluminum-nitride compounds2025
Strain compensated rare earth group III-nitride heterostructures2024
Semiconductor structure having both enhancement mode group III-N high electron m2023
Semiconductor structure having both enhancement mode group III-N high electron m2023
Gallium nitride high electron mobility transistors (HEMTs) having reduced curren2023
Depletion mode high electron mobility field effect transistor (HEMT) semiconduct2022
Depletion mode high electron mobility field effect transistor (HEMT) semiconduct2022
Semiconductor structure having both enhancement mode group III-N high electron m2021
Semiconductor structure having both enhancement mode group III-N high electron m2021
Field effect transistor structure having notched mesa2020
Group III-nitride structure having successively reduced crystallographic disloca2020
Group III-nitride structure having successively reduced crystallographic disloca2020