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Home › Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same

Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same

US Patent 7342293 · Granted Mar 11, 2008

Estimated economic value: $9,920,000 ⓘ

Assignee

IBM

Inventors

Thomas A. Wallner (19 patents)
Thomas N. Adam (118 patents)
Stephen W. Bedell (347 patents)
Joel P. de Souza (133 patents)

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