Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor metal contamination reduction for ultra-thin gate dielectrics

Semiconductor metal contamination reduction for ultra-thin gate dielectrics

US Patent 7342290 · Granted Mar 11, 2008

Estimated economic value: $9,920,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Isolation stack for a bipolar transistor and related methods2025
Bipolar transistor2025
Field effect transistor with shallow trench isolation features within source/dra2025
Heterojunction bipolar transistor with buried trap rich isolation region2025
Structure including grating coupler with optofluidic grating channels2025
Photodiodes2025
Electro-absorption modulators with stacked waveguide tapers2025
Contact-over-active-gate transistor structures with contacts landed on enlarged 2025
Field-effect transistors having a gate electrode positioned inside a substrate r2025
Heterojunction bipolar transistor with buried trap rich isolation region2024
Field effect transistor2024
IC structure including porous semiconductor layer in bulk substrate adjacent tre2024