Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor layer formed by selective deposition and method for depositing semiconductor layer

Semiconductor layer formed by selective deposition and method for depositing semiconductor layer

US Patent 7314672 · Granted Jan 1, 2008

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Information processing apparatus and information processing method for dividing 2023
Information terminal, information presentation method for an information termina2018
Information terminal, information control method for an information terminal, an2016
Group III nitride semiconductor optical device2010
Semiconductor layer formed by selective deposition and method for depositing sem2010
Method of manufacturing a light emitting device with a doped active layer2009
Semiconductor layer formed by selective deposition and method for depositing sem2005
Gallium nitride based compound semiconductor laser and method of forming the sam2002
Gallium nitride based compound semiconductor laser and method of forming the sam2001
Fabrication of nitride semiconductor light-emitting device2000
Method of crystal growth of a GaN layer over a GaAs substrate2000
Growth of GaN layers on quartz substrates2000