AK

Akitaka Kimura

NE Nec: 16 patents #699 of 14,502Top 5%
SO Sony: 4 patents #8,966 of 25,231Top 40%
SI Sumitomo Rubber Industries: 2 patents #809 of 1,637Top 50%
Overall (All Time): #206,058 of 4,157,543Top 5%
21
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
11789589 Information processing apparatus and information processing method for dividing display screen for display of plurality of applications Masahiko Naito, Takashi Hemmi, Yuumi Ozawa, Kenji Yokoyama, Hiroaki Adachi +1 more 2023-10-17
10061472 Information terminal, information presentation method for an information terminal, and information presentation program Kenta Ohmori, Takashi Kawakami, Seigo Iwasaki, Hiroyuki Kawakami, Xiaoyu Ruan +6 more 2018-08-28
9449237 Information terminal, information control method for an information terminal, and information control program Daichi Yagi, Hiroyuki Kawakami 2016-09-20
7741654 Group III nitride semiconductor optical device Kazuhisa Fukuda, Chiaki Sasaoka 2010-06-22
7655485 Semiconductor layer formed by selective deposition and method for depositing semiconductor layer 2010-02-02
7479448 Method of manufacturing a light emitting device with a doped active layer 2009-01-20
7314672 Semiconductor layer formed by selective deposition and method for depositing semiconductor layer 2008-01-01
6887726 Semiconductor layer formed by selective deposition and method for depositing semiconductor layer 2005-05-03
6420198 Gallium nitride based compound semiconductor laser and method of forming the same Masaaki Nido 2002-07-16
6201823 Gallium nitride based compound semiconductor laser and method of forming the same Masaaki Nido 2001-03-13
6100106 Fabrication of nitride semiconductor light-emitting device Atsushi Yamaguchi, Chiaki Sasaoka 2000-08-08
6096130 Method of crystal growth of a GaN layer over a GaAs substrate Haruo Sunakawa, Masaaki Nido 2000-08-01
6033490 Growth of GaN layers on quartz substrates Chiaki Sasaoka, Koichi Izumi 2000-03-07
6028877 Gallium nitride based semiconductor laser with an improved aluminum gallium nitride cladding layer disposed between an active region and a substrate 2000-02-22
5963787 Method of producing gallium nitride semiconductor light emitting device Chiaki Sasaoka 1999-10-05
5843227 Crystal growth method for gallium nitride films Haruo Sunakawa, Masaaki Nido, Atsushi Yamaguchi 1998-12-01
5825053 Heterostructure III-V nitride semiconductor device including InP substrate Haruo Sunakawa, Masaaki Nido, Atsushi Yamaguchi 1998-10-20
5559820 Multiple quantum well semiconductor laser Masaaki Nido, Akihisa Tomita, Akira Suzuki 1996-09-24
5425042 Refractive index control optical semiconductor device Masaaki Nido 1995-06-13
4356214 Method of forming puncture preventing layer for tire and apparatus employed therefor Kozi Soeda, Katuyuki Hoshikawa 1982-10-26
4262624 Method of forming puncture preventing layer for tire and apparatus employed therefor Kozi Soeda, Katuyuki Hoshikawa 1981-04-21