Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11789589 | Information processing apparatus and information processing method for dividing display screen for display of plurality of applications | Masahiko Naito, Takashi Hemmi, Yuumi Ozawa, Kenji Yokoyama, Hiroaki Adachi +1 more | 2023-10-17 |
| 10061472 | Information terminal, information presentation method for an information terminal, and information presentation program | Kenta Ohmori, Takashi Kawakami, Seigo Iwasaki, Hiroyuki Kawakami, Xiaoyu Ruan +6 more | 2018-08-28 |
| 9449237 | Information terminal, information control method for an information terminal, and information control program | Daichi Yagi, Hiroyuki Kawakami | 2016-09-20 |
| 7741654 | Group III nitride semiconductor optical device | Kazuhisa Fukuda, Chiaki Sasaoka | 2010-06-22 |
| 7655485 | Semiconductor layer formed by selective deposition and method for depositing semiconductor layer | — | 2010-02-02 |
| 7479448 | Method of manufacturing a light emitting device with a doped active layer | — | 2009-01-20 |
| 7314672 | Semiconductor layer formed by selective deposition and method for depositing semiconductor layer | — | 2008-01-01 |
| 6887726 | Semiconductor layer formed by selective deposition and method for depositing semiconductor layer | — | 2005-05-03 |
| 6420198 | Gallium nitride based compound semiconductor laser and method of forming the same | Masaaki Nido | 2002-07-16 |
| 6201823 | Gallium nitride based compound semiconductor laser and method of forming the same | Masaaki Nido | 2001-03-13 |
| 6100106 | Fabrication of nitride semiconductor light-emitting device | Atsushi Yamaguchi, Chiaki Sasaoka | 2000-08-08 |
| 6096130 | Method of crystal growth of a GaN layer over a GaAs substrate | Haruo Sunakawa, Masaaki Nido | 2000-08-01 |
| 6033490 | Growth of GaN layers on quartz substrates | Chiaki Sasaoka, Koichi Izumi | 2000-03-07 |
| 6028877 | Gallium nitride based semiconductor laser with an improved aluminum gallium nitride cladding layer disposed between an active region and a substrate | — | 2000-02-22 |
| 5963787 | Method of producing gallium nitride semiconductor light emitting device | Chiaki Sasaoka | 1999-10-05 |
| 5843227 | Crystal growth method for gallium nitride films | Haruo Sunakawa, Masaaki Nido, Atsushi Yamaguchi | 1998-12-01 |
| 5825053 | Heterostructure III-V nitride semiconductor device including InP substrate | Haruo Sunakawa, Masaaki Nido, Atsushi Yamaguchi | 1998-10-20 |
| 5559820 | Multiple quantum well semiconductor laser | Masaaki Nido, Akihisa Tomita, Akira Suzuki | 1996-09-24 |
| 5425042 | Refractive index control optical semiconductor device | Masaaki Nido | 1995-06-13 |
| 4356214 | Method of forming puncture preventing layer for tire and apparatus employed therefor | Kozi Soeda, Katuyuki Hoshikawa | 1982-10-26 |
| 4262624 | Method of forming puncture preventing layer for tire and apparatus employed therefor | Kozi Soeda, Katuyuki Hoshikawa | 1981-04-21 |