Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Use of chlorine to fabricate trench dielectric in integrated circuits

Use of chlorine to fabricate trench dielectric in integrated circuits

US Patent 7265015 · Granted Sep 4, 2007

Estimated economic value: $556,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Graphics engine and graphics processing method applicable to player2025
Method for insulating aluminum backboard of photovoltaic2016
Semiconductor devices with gate electrodes and with monocrystalline silicon regi2012
Method of forming ONO-type sidewall with reduced bird's beak2011
Method of repairing deep subsurface defects in a silicon substrate that includes2010
Fabrication of integrated circuits with isolation trenches2010
Nonvolatile memories with tunnel dielectric with chlorine2010
Reducing nitrogen concentration with in-situ steam generation2008
Use of TEOS oxides in integrated circuit fabrication processes2008
Methods for improving quality of high temperature oxide (HTO) formed from haloge2008
Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics2007
Precision creation of inter-gates insulator2007