Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Line mask defined active areas for 8F2 DRAM cells with folded bit lines and deep trench patterns

Line mask defined active areas for 8F2 DRAM cells with folded bit lines and deep trench patterns

US Patent 7244980 · Granted Jul 17, 2007

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Protection device with space saving layout2025
Transistor arrangement with a lateral superjunction transistor device2025
Fill pattern for power transistor and diode devices2025
Semiconductor die with a power device and method of manufacturing the same2024
Transistor device2024
Semiconductor device having a high breakdown voltage2023
Semiconductor device having a high breakdown voltage2023
Semiconductor device and method for producing a semiconductor device2022
Electronic circuit with a transistor device, a level shifter and a drive circuit2022
Semiconductor device and method of producing the same2022
Superjunction transistor arrangement and method of producing thereof2022
Electronic circuit with a transistor device and a level shifter2021