Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same

Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same

US Patent 7238568 · Granted Jul 3, 2007

Estimated economic value: $5,061,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Distributed photobiomodulation therapy system with intelligent LED pad2025
Distributed photobiomodulation therapy system and method2024
Methods and apparatus for HyperSecure last mile communication2024
Decentralized cybersecure privacy network for cloud communication, computing and2023
Methods and apparatus for HyperSecure last mile communication2023
Augmented cognition methods and apparatus for contemporaneous feedback in psycho2023
Methods and apparatus for HyperSecure last mile communication2023
Universal surface-mount semiconductor package2022
Distributed photobiomodulation therapy system and method2022
Decentralized cybersecure privacy network for cloud communication, computing and2022
Method of supplying electrical power from rigid printed circuit board to another2021
Phototherapy system with dynamic drive for light-emitting diodes2021