Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming one-transistor memory cell and structure formed thereby

Method of forming one-transistor memory cell and structure formed thereby

US Patent 7238566 · Granted Jul 3, 2007

Estimated economic value: $9,167,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming layout design2018
Jog design in integrated circuits2017
Semiconductor structure and manufacturing method thereof2017
Jog design in integrated circuits2016
Method of forming layout design2016
Jog design in integrated circuits2014
Self-aligned metal electrode to eliminate native oxide effect for metal insulato2009
Method to reduce a capacitor depletion phenomena2008
Dual poly layer and method of manufacture2007
Self-aligned metal electrode to eliminate native oxide effect for metal insulato2007
Method for integrating copper process and MIM capacitor for embedded DRAM2005
Method for forming high purity silicon oxide field oxide isolation region2004