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Home › Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques

Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques

US Patent 7235812 · Granted Jun 26, 2007

Estimated economic value: $10,209,000 ⓘ

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