Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High-density metal capacitor using dual-damascene copper interconnect

High-density metal capacitor using dual-damascene copper interconnect

US Patent 7187015 · Granted Mar 6, 2007

Estimated economic value: $19,130,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated antennas on side wall of 3D stacked die2025
Semiconductor product with edge integrity detection structure2025
Cantilevered power planes to provide a return current path for high-speed signal2025
Integrated circuit package with serpentine conductor and method of making2024
Photonics integration in semiconductor packages2024
Redistribution metal and under bump metal interconnect structures and method2021
Die edge crack and delamination detection2020
Redistribution metal and under bump metal interconnect structures and method2019
Integrated circuit with die edge assurance structure2017
Semiconductor die with fuse window and a monitoring window over a structure whic2012
Metal-insulator-metal (MIM) capacitor2008
High density metal capacitor using via etch stopping layer as field dielectric i2006