Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nitrogen-doped silicon substantially free of oxidation induced stacking faults

Nitrogen-doped silicon substantially free of oxidation induced stacking faults

US Patent 7182809 · Granted Feb 27, 2007

Estimated economic value: $145,169,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nitrogen-doped silicon substantially free of oxidation induced stacking faults2008
Nitrogen-doped silicon substantially free of oxidation induced stacking faults2008
Nitrogen-doped silicon substantially free of oxidation induced stacking faults2008
Low defect density silicon having a vacancy-dominated core substantially free of2007
Process for making silicon wafers with stabilized oxygen precipitate nucleation 2007
Single crystal silicon ingot having a high arsenic concentration2006
Method for the production of low defect density silicon2006
Controlled neck growth process for single crystal silicon2005
Seed crystals for pulling single crystal silicon2005
Method for the production of low defect density silicon2005
Low defect density silicon having a vacancy-dominated core substantially free of2005
Silicon wafers with stabilized oxygen precipitate nucleation centers and process2004