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Home › Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure

Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure

US Patent 7153757 · Granted Dec 26, 2006

Estimated economic value: $23,651,000 ⓘ

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