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Home › Method for forming a filled trench in a semiconductor layer of a semiconductor substrate, and a semiconductor substrate with a semiconductor layer having a filled trench therein

Method for forming a filled trench in a semiconductor layer of a semiconductor substrate, and a semiconductor substrate with a semiconductor layer having a filled trench therein

US Patent 7122416 · Granted Oct 17, 2006

Estimated economic value: $32,533,000 ⓘ

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