Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device formed with an air gap using etch back of inter layer dielectric (ILD)

Semiconductor device formed with an air gap using etch back of inter layer dielectric (ILD)

US Patent 7126223 · Granted Oct 24, 2006

Estimated economic value: $13,658,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thin film transistors having strain-inducing structures integrated with 2D chann2025
Encapsulation for transition metal dichalcogenide nanosheet transistor and metho2025
Stacked 2D CMOS with inter metal layers2025
Digitally controlled lithographically-defined multi-frequency acoustic resonator2025
Integrated circuit structures with graphene contacts2025
Contact gating for 2D field effect transistors2025
Thin film transistors having semiconductor structures integrated with 2D channel2025
Transistors including two-dimensional materials2025
TMD inverted nanowire integration2025
Transition metal dichalcogenide nanosheet transistors and methods of fabrication2025
Transistors with monocrystalline metal chalcogenide channel materials2025
Transition metal dichalcogenide nanowires and methods of fabrication2024