Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Capacitor having a barrier layer made of a transition metal phosphide, arsenide or sulfide

Capacitor having a barrier layer made of a transition metal phosphide, arsenide or sulfide

US Patent 7122856 · Granted Oct 17, 2006

Estimated economic value: $214,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Low temperature chemical vapor deposition process for forming bismuth-containing2006
Method for producing a ferroelectric layer2004
Method of controlled chemical vapor deposition of a metal oxide ceramic layer2004
Low temperature chemical vapor deposition process for forming bismuth-containing2004
Method of patterning ferroelectric layers2004
Textured Bi-based oxide ceramic films2004
Reduced diffusion of a mobile specie from a metal oxide ceramic2004
Process for etching bismuth-containing oxide films2003
Process for producing an integrated semiconductor memory configuration2003
Method for preventing etching-induced damage to a metal oxide film by patterning2003
Complex of an element of transition group IV or V for forming an improved precur2003
Low temperature CVD processes for preparing ferroelectric films using Bi alcoxid2002