Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a transistor with a channel region in a layer of composite material

Method of forming a transistor with a channel region in a layer of composite material

US Patent 7118973 · Granted Oct 10, 2006

Estimated economic value: $8,434,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming a copper topped interconnect structure that has thin and thick2012
Growth of group III nitride-based structures and integration with conventional C2012
Method of forming a copper-compatible fuse target2012
Copper-compatible fuse target2011
Fuse target and method of forming the fuse target in a copper process flow2011
Stacked die structure with an underlying copper-topped die2010
Copper-topped interconnect structure that has thin and thick copper traces and m2010
Dual-sided semiconductor device with a resistive element that requires little si2006
Method of forming a MOS transistor with a layer of silicon germanium carbon2006
Bipolar transistor with an ultra small self-aligned polysilicon emitter2006
Bipolar transistor structure with ultra small polysilicon emitter2005
MOS transistor and method of forming the transistor with a channel region in a l2004