Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Enhancing strained device performance by use of multi narrow section layout

Enhancing strained device performance by use of multi narrow section layout

US Patent 7101765 · Granted Sep 5, 2006

Estimated economic value: $13,820,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Evaporation-based sample preparation workflow for mass spectrometry2025
Semiconductor layout in FinFET technologies2025
Benzylpyridinium reagent for mass spectrometry2025
Integration methods to fabricate internal spacers for nanowire devices2025
Decoupling capacitors and methods of fabrication2025
Leakage current reduction in electrical isolation gate structures2025
Planar buried channel structure integrated with non-planar structures2025
Integrated nanowire and nanoribbon patterning in transistor manufacture2024
FinFET varactor quality factor improvement2024
Mounting clip2024
Integration methods to fabricate internal spacers for nanowire devices2024
FIN shaping using templates and integrated circuit structures resulting therefro2023