Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Electromigration-reliability improvement of dual damascene interconnects

Electromigration-reliability improvement of dual damascene interconnects

US Patent 7087516 · Granted Aug 8, 2006

Estimated economic value: $12,359,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Low to moderate temperature nanolaminate heater2011
Area X-ray or UV camera system for high-intensity beams2010
Method of doping a conductive layer near a via2007
Tamper to delay motion and decrease ionization of a sample during short pulse x-2007
Method for characterizing mask defects using image reconstruction from X-ray dif2007
Method of making a semiconductor device that has copper damascene interconnects 2006
Direct-patterned optical waveguides on amorphous silicon films2005
Wafer-bonding using solder and method of making the same2005
Method of making a semiconductor device that has copper damascene interconnects 2004
Determination of permeability of layer material within interconnect2004
System and method for determining location of extrusion in interconnect2004
Structure, system, and method for assessing electromigration permeability of lay2004