Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing semiconductor devices by monitoring nitrogen bearing species in gate oxide layer

Method for manufacturing semiconductor devices by monitoring nitrogen bearing species in gate oxide layer

US Patent 7033846 · Granted Apr 25, 2006

Estimated economic value: $487,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-aligned method for fabricating a capacitor under bit-line (cub) dynamic ran2003
Method of fabricating a DRAM device featuring alternate fin type capacitor struc2003
Method of forming shallow trench isolation with rounded corner and divot-free by2003
Method of fabricating capacitor-under-bit line (CUB) DRAM2003
Methods for forming memory cell structures2002
Method to reduce bit line capacitance in cub drams2002
Method for forming a bitline contact via within a memory cell structure2002
Method of planarizing peripheral circuit region of a DRAM2002
Method of fabricating a capacitor under bit line structure for a dynamic random 2001
Method of fabricating a capacitor under bit line structure with increased capaci2001
Fabrication method of a twin-tub capacitor2001
Method of fabricating capacitor capable of maintaining the height of the periphe2000